9F,Bldg.A Dongshengmingdu Plaza,No.21 Chaoyang East Road,Lianyungang Jiangsu,China +86-13951255589 [email protected]
Our advanced ceramic metallization process creates a robust, conductive metal layer on ceramic surfaces, enabling strong ceramic-to-metal seals for high-performance electronics. With various techniques including Mo/Mn, plating, and thick film, we provide customized solutions for demanding applications. Request a Quote for hermetic packaging and reliable circuit integration with over 95% bond strength retention.
Product Core Advantages
Our ceramic metallization services deliver critical benefits for electronic components and power modules:
Superior Bond Strength: Metallized layer achieves tensile strength >80 MPa, ensuring durable ceramic-metal integration under thermal cycling and mechanical stress.
Excellent Hermeticity: Provides leak rate <1×10⁻⁸ atm·cc/sec He, ideal for vacuum tubes, laser housings, and aerospace components requiring absolute sealing.
High Electrical Conductivity: Low resistivity metal films (<15 mΩ/□) enable efficient current carrying capacity and stable circuit performance.
Custom Process Selection: Choose from Mo/Mn, Au/Ni/Cu plating, or thick film ceramic metallization to match your specific thermal, electrical, and budget requirements.When ceramics are used in circuits, they must first undergo metallization. This process involves applying a metal film that bonds firmly to the ceramic surface and is resistant to melting, thereby making it conductive.
Application Fields
Precision ceramic metallization is critical across advanced industries:
Semiconductor & Laser Packaging: TO headers, fiber optic housings, and laser diode packages requiring hermetic sealing and reliable lead attachment.
Power Electronics: DBC/DPC substrates for IGBTs, MOSFET modules, and EV power converters, enabling efficient heat dissipation and current capacity.
Aerospace & Defense: Radar systems (TWT), satellite communications, and vacuum interrupters where performance stability in extreme conditions is mandatory.
Advanced Sensors & LEDs: Automotive sensors, high-power LED COB substrates, and medical imaging devices utilizing patterned conductive traces on ceramics.
Service and Support
We guarantee component reliability with comprehensive technical and service backing:
Engineering Support: Our experts help select the optimal ceramic metallization process (Mo/Mn, plating, thick film, DBC, DPC) for your design and performance goals.
Rapid Prototyping: Accelerate development with quick-turn ceramic metallization samples and design-for-manufacturability (DFM) feedback within 1-2 weeks.
Stringent Quality Control: Every batch undergoes full inspection per MIL-STD-883 standards, ensuring consistent ceramic metallization quality and long-term performance.
Volume Production Capacity: Scalable manufacturing with automated plating and printing lines supports high-volume orders without compromising delivery timelines.
Contact us today to discuss your project specifications. Our technical team is ready to provide a feasibility analysis and ceramic metallization sample to meet your hermetic sealing and circuit integration challenges.
Future Trends & Technology Roadmap
The ceramic metallization industry is evolving to meet demands from next-generation electronics. Key trends focus on achieving finer features, higher power densities, and enhanced reliability while reducing environmental impact. The development of laser-assisted ceramic metallization processes enables creation of sub-20μm circuit traces, supporting miniaturization in 5G/Wi-Fi 6E RF modules and advanced sensor packages. Meanwhile, nano-scale silver and copper sintering pastes are revolutionizing thermal performance in ceramic metallization, delivering 40% higher thermal conductivity than traditional thick-film materials while processing at temperatures below 300°C.
Sustainability initiatives are driving the adoption of lead-free and chrome-free ceramic metallization systems without compromising bond strength or hermetic performance. The integration of AI-driven process control for ceramic metallization lines ensures unprecedented consistency in layer thickness and composition, reducing parameter variations by over 60% compared to conventional methods. These advancements position ceramic metallization as the enabling technology for tomorrow's electric vehicle power modules, quantum computing housings, and medical implantable devices where absolute reliability is non-negotiable.
Process Selection Guidance
Choosing the optimal ceramic metallization approach requires balancing technical requirements with economic considerations. For high-reliability aerospace and military applications where failure is not an option, the molybdenum-manganese (Mo/Mn) ceramic metallization process remains the gold standard, despite its higher temperature requirements and cost. For high-volume consumer electronics and automotive sensors, thick-film ceramic metallization offers the best balance of performance and manufacturing economics. When thermal management is the primary concern - particularly in silicon carbide and gallium nitride power devices - direct bonded copper (DBC) ceramic metallization provides unmatched heat dissipation capabilities.
Our technical team provides comprehensive application analysis to determine your ideal ceramic metallization solution based on thirteen critical parameters including CTE matching, thermal conductivity needs, feature resolution requirements, and production volume. This systematic approach ensures your ceramic metallization strategy delivers both technical excellence and cost-effectiveness throughout your product lifecycle, from initial prototype through volume manufacturing and field deployment.

Technical Specifications
The table below compares our primary ceramic metallization techniques for informed selection:
Parameter |
Mo/Mn Metallization |
Thick Film Metallization |
DBC (Direct Bonded Copper) |
DPC (Direct Plated Copper) |
Process Temperature |
1500-1600°C |
850-1000°C |
1065°C |
<300°C |
Typical Layer Thickness |
10-30 µm |
10-20 µm |
100-600 µm |
10-50 µm |
Adhesion Strength |
>100 MPa |
50-70 MPa |
>70 MPa |
>60 MPa |
Line Resolution |
>500 µm |
>200 µm |
>500 µm |
<50 µm |
Thermal Conductivity |
Dependent on ceramic |
Moderate |
Excellent (AlN: 180-200 W/mK) |
Good |
Best For |
High-reliability hermetic seals, extreme environments |
Hybrid circuits, sensors, resistors |
High-power modules, IGBTs, automotive |
High-density LED packaging, RF/microwave |
